Description
The NCE80H11 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications.
General Features
● V DS =80V,I D =105A
R DS(ON) < 6.5m? @ V GS =10V (Typ:5.8m?)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply